Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simula...

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Bibliographic Details
Published inJournal of semiconductors Vol. 31; no. 9; pp. 37 - 40
Main Author 张世锋 丁扣宝 韩雁 韩成功 胡佳贤 张斌
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
Subjects
TCAD
器械
接口状态
电流脉冲
计算机辅助设计
退化机制
降解行为
雪崩击穿
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ISSN1674-4926
DOI10.1088/1674-4926/31/9/094006

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Summary:Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the device.Two different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simulations and charge pumping measurements.The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift region.Both of the mechanisms are enhanced with increasing avalanche breakdown current.
Bibliography:NLDMOS
O633.14
TN322.8
degradation
NLDMOS; avalanche breakdown; degradation; charge-pumping
charge-pumping
11-5781/TN
avalanche breakdown
ISSN:1674-4926
DOI:10.1088/1674-4926/31/9/094006