Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 5; pp. 444 - 449
Main Author 徐小波 张鹤鸣 胡辉勇 马建立
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
Subjects
BiCMOS技术
SiGe
SOI器件
仿真验证
建模
早期
硅绝缘体
硅锗异质结双极晶体管
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/5/058502

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Summary:Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiCe devices and circuits.
Bibliography:heterojunction bipolar transistor （HBT）, SiGe, silicon-on-insulator, Early effect
Xu Xiao-Bo,Zhang He-Ming,Hu Hui-Yong,Ma Jian-Li Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China
11-5639/O4
Silicon germanium （SiGe） heterojunction bipolar transistor （HBT） on thin silicon-on-insulator （SOI） has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiCe devices and circuits.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/5/058502