Influence of Ga^＋ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 20; no. 5; pp. 388 - 392
Main Author 祁先进 王寅岗 缪雪飞 李子全 黄一中
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
Subjects
交换偏置场
交换耦合
热弛豫
照射
磁控溅射沉积
离子辐照
衬底表面
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/5/057503

Cover

Abstract This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.
AbstractList This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.
Author 祁先进 王寅岗 缪雪飞 李子全 黄一中
Author_xml – sequence: 1
  fullname: 祁先进 王寅岗 缪雪飞 李子全 黄一中
BookMark eNqNkNtKAzEQhoNUsK0-ghDvXXc2h03EKylaCxVv9NaQ5tBGttma3aI-g6_kO_kKtrb0QgSFgRmG_5vD30OdWEeH0HEBZwVImRelYFkBvMwJ5DwHLjjQPdQlwGVGJWUd1N1pDlCvaZ4AygII7aKXUfTV0kXjcO3xUD9-frzjUEccUtI26HZdr6KduTTXFU6u0q_brsfu1cx0nDo8CbrBPrjK4hB37czUy0XlLB7U1y4fpdu4Elb6zaXmEO17XTXuaJv76OH66n5wk43vhqPB5TgzlIs20yCFsJy7wpjzkhmpGTPeaFZy6owojZaGMA7SeE-oIEz4CVhLiQVjqSa0j_hmrkl10yTn1SKFuU5vqgC1dk-tnVFrZxQBxdXGvRV38YMzof3-u006VH_SsKFDvfj3wtNfkN-kamH9Sn6yvW9Wx-lziNMdRIWUlLCSfgGhXqB-
CitedBy_id crossref_primary_10_1088_1674_1056_21_7_077102
crossref_primary_10_1134_S1063784224070235
crossref_primary_10_1016_j_jallcom_2025_179180
Cites_doi 10.1063/1.3065521
10.1063/1.1447531
10.1103/PhysRev.102.1413
10.1016/j.nimb.2007.01.264
10.1088/1674-1056/19/3/037503
10.1088/0022-3727/37/16/R01
10.1016/j.nimb.2004.01.208
10.1016/j.jmmm.2006.01.118
10.1016/j.jmmm.2007.07.032
10.1063/1.361891
10.1063/1.1518769
10.1063/1.1699475
10.1063/1.2162817
10.1007/s11664-008-0616-z
10.1063/1.371691
10.1063/1.2710953
10.7498/aps.59.7357
10.1016/S0304-8853(01)00369-9
10.1063/1.2956680
10.1063/1.2917396
10.1016/j.jmmm.2004.11.229
10.1016/j.jmmm.2004.11.278
10.1063/1.2354591
10.1063/1.1745120
10.1088/1674-1056/19/3/037505
10.1103/PhysRevB.75.014434
10.1088/0022-3727/36/21/001
10.1016/S0038-1098(01)00427-6
10.1088/1674-1056/18/2/063
ContentType Journal Article
DBID 2RA
92L
CQIGP
~WA
AAYXX
CITATION
DOI 10.1088/1674-1056/20/5/057503
DatabaseName 维普_期刊
中文科技期刊数据库-CALIS站点
中文科技期刊数据库-7.0平台
中文科技期刊数据库- 镜像站点
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
DocumentTitleAlternate Influence of Ga^＋ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers
EISSN 2058-3834
EndPage 392
ExternalDocumentID 10_1088_1674_1056_20_5_057503
37883246
GroupedDBID 02O
1JI
1WK
29B
2RA
4.4
5B3
5GY
5VR
5VS
5ZH
6J9
7.M
7.Q
92L
AAGCD
AAJIO
AAJKP
AALHV
AATNI
ABHWH
ABJNI
ABQJV
ACAFW
ACGFS
ACHIP
AEFHF
AENEX
AFUIB
AFYNE
AHSEE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
BBWZM
CCEZO
CCVFK
CEBXE
CHBEP
CJUJL
CQIGP
CRLBU
CS3
DU5
EBS
EDWGO
EJD
EMSAF
EPQRW
EQZZN
FA0
FEDTE
HAK
HVGLF
IJHAN
IOP
IZVLO
JCGBZ
KNG
KOT
M45
N5L
NT-
NT.
PJBAE
Q02
RIN
RNS
ROL
RPA
RW3
SY9
TCJ
TGP
UCJ
W28
~WA
AAPBV
ABPTK
CDYEO
UNR
-SA
-S~
AAYXX
ACARI
ADEQX
AEINN
AERVB
AGQPQ
AOAED
ARNYC
CAJEA
CITATION
Q--
U1G
U5K
ID FETCH-LOGICAL-c357t-a0877d55e1cc964c8a44cfca4653ec76ca8c24508cff237247fb0dd32d0cd3a23
IEDL.DBID IOP
ISSN 1674-1056
IngestDate Wed Oct 01 04:39:33 EDT 2025
Thu Apr 24 22:50:05 EDT 2025
Mon May 13 15:39:20 EDT 2019
Tue Nov 10 14:20:00 EST 2020
Wed Feb 14 09:54:01 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 5
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c357t-a0877d55e1cc964c8a44cfca4653ec76ca8c24508cff237247fb0dd32d0cd3a23
Notes This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.
11-5639/O4
Qi Xian-Jin,Wang Yin-Gang,Miao Xue-Fei,Li Zi-Quan,Huang Yi-Zhong a） College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China b） Department of Materials, Oxford University, Oxford OX1 3PH, UK c） School of Materials Science and Engineering, Nanyang Technological University, Singapore
thermal relaxation, exchange bias, ion irradiation, energy barrier
PageCount 5
ParticipantIDs iop_primary_10_1088_1674_1056_20_5_057503
crossref_citationtrail_10_1088_1674_1056_20_5_057503
chongqing_primary_37883246
crossref_primary_10_1088_1674_1056_20_5_057503
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2011-05-01
PublicationDateYYYYMMDD 2011-05-01
PublicationDate_xml – month: 05
  year: 2011
  text: 2011-05-01
  day: 01
PublicationDecade 2010
PublicationTitle Chinese physics B
PublicationTitleAlternate Chinese Physics
PublicationYear 2011
Publisher IOP Publishing
Publisher_xml – name: IOP Publishing
References 22
23
Fassbender J (8) 2004; 37
24
25
26
Qi X J (18) 2010; 19
29
Xu M (7) 2010; 59
Folks L (11) 2003; 36
Zhou G H (28) 2009; 18
30
10
12
13
14
15
16
17
Klemmer T J (19) 2005
1
2
Qi X J (27) 2010; 19
3
4
5
6
9
20
21
References_xml – ident: 5
  doi: 10.1063/1.3065521
– ident: 26
  doi: 10.1063/1.1447531
– ident: 1
  doi: 10.1103/PhysRev.102.1413
– ident: 12
  doi: 10.1016/j.nimb.2007.01.264
– volume: 19
  start-page: 037503
  issn: 1674-1056
  year: 2010
  ident: 27
  publication-title: Chin. Phys.
  doi: 10.1088/1674-1056/19/3/037503
– volume: 37
  start-page: R179
  issn: 0022-3727
  year: 2004
  ident: 8
  publication-title: J. Phys. D: Appl. Phys.
  doi: 10.1088/0022-3727/37/16/R01
– ident: 22
  doi: 10.1016/j.nimb.2004.01.208
– ident: 23
  doi: 10.1016/j.jmmm.2006.01.118
– ident: 9
  doi: 10.1016/j.jmmm.2007.07.032
– year: 2005
  ident: 19
– ident: 20
  doi: 10.1063/1.361891
– ident: 25
  doi: 10.1063/1.1518769
– ident: 10
  doi: 10.1063/1.1699475
– ident: 2
  doi: 10.1063/1.2162817
– ident: 13
  doi: 10.1007/s11664-008-0616-z
– ident: 29
  doi: 10.1063/1.371691
– ident: 6
  doi: 10.1063/1.2710953
– volume: 59
  start-page: 7357
  issn: 0372-736X
  year: 2010
  ident: 7
  publication-title: Acta Phys. Sin.
  doi: 10.7498/aps.59.7357
– ident: 24
  doi: 10.1016/S0304-8853(01)00369-9
– ident: 4
  doi: 10.1063/1.2956680
– ident: 3
  doi: 10.1063/1.2917396
– ident: 15
  doi: 10.1016/j.jmmm.2004.11.229
– ident: 14
  doi: 10.1016/j.jmmm.2004.11.278
– ident: 17
  doi: 10.1063/1.2354591
– ident: 16
  doi: 10.1063/1.1745120
– volume: 19
  start-page: 037505
  issn: 1674-1056
  year: 2010
  ident: 18
  publication-title: Chin. Phys.
  doi: 10.1088/1674-1056/19/3/037505
– ident: 30
  doi: 10.1103/PhysRevB.75.014434
– volume: 36
  start-page: 2601
  issn: 0022-3727
  year: 2003
  ident: 11
  publication-title: J. Phys. D: Appl. Phys.
  doi: 10.1088/0022-3727/36/21/001
– ident: 21
  doi: 10.1016/S0038-1098(01)00427-6
– volume: 18
  start-page: 790
  issn: 1674-1056
  year: 2009
  ident: 28
  publication-title: Chin. Phys.
  doi: 10.1088/1674-1056/18/2/063
SSID ssj0061023
Score 1.8753093
Snippet This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the...
SourceID crossref
iop
chongqing
SourceType Enrichment Source
Index Database
Publisher
StartPage 388
SubjectTerms 交换偏置场
交换耦合
热弛豫
照射
磁控溅射沉积
离子辐照
衬底表面
Title Influence of Ga^＋ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers
URI http://lib.cqvip.com/qk/85823A/201105/37883246.html
http://iopscience.iop.org/1674-1056/20/5/057503
Volume 20
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIOP
  databaseName: AUTh Library subscriptions: IOP Publishing
  customDbUrl:
  eissn: 2058-3834
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0061023
  issn: 1674-1056
  databaseCode: IOP
  dateStart: 20080101
  isFulltext: true
  titleUrlDefault: https://iopscience.iop.org/
  providerName: IOP Publishing
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV3dSxwxEA9WKPSl1WrpWZU81Acpe7fNx-7eo0ivKlh9qOBbSCZJe3jdvZ57IP3rO7MfR0WhCvuwZCezbCab_JLM_IaxjzLYAnFqmgjnNR0z-sQhyk3GFrwYF1AooA3982_ZyZU6u9bXa6zPTDet5t3IP8Tb9iQ_y1VC-eFxnT7SI8IXDbsn_aoUsHdx2Y-8GdEQ0AKrr9FH7OAi71EtxKfwsyp__MZZ4t689AJf_s80M3nDLvtgnda75Ga4rN0Q_jzkbnzqF2yw1x3k5EdtH9lka6F8y142rp9wu8Xq0z5PCa8i_2o_cTQVny4WxFpAZuN4EUz8hUoo9OWuK4083LVxw9xN7S1vnOH4tFwVJ1At57Pg-XE1CaPTxXmJgjNLIH-bXU2-fD8-SbpcDAlIndeJJeJAr3X4DDDOFBRWKYhgiZ4tQJ6BLUAoRHsQo5C5UHl0qfdS-BS8tEK-Y-tlVYb3jCMgkGnMXBAOlTjrKJw9StBBaZA2G7CdlVXMvOXcMER7j9gPH6reTAY6FnNKpjEzzWl6URhqbUOtbURqtGlbe8CGq2q9yv9UOETzPVX24J7sYzJm7uPOM3R-YK_a3Wtyrdxl6_ViGfYQ_tRuv-nzfwEqXfR7
linkProvider IOP Publishing
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1Lb9QwELb6EIgLb9SWR32AA0LZBD-y2WPVsu0CLT20Um-WPbZh1SVZtlmp4td3ZpOsKALRCimHKBmPnBnF_mzPfMPYaxlsgTg1S4Tzmo4ZfeIQ5SYDC14MCigU0Ib-4VF-cKo-numzFba3zIWppu3Q38Pbhii4MWEbEFekFDefUMF4XLinOiXAkcl06uMqW9cyl8SgP_py3I3HOZET0LKra9bl8fxNFbEsfKvKrz9w7rg2W61ij36ZfIYPWOi63cScnPfmtevBz98YHf_3ux6y-y065TtNm0dsJZSP2Z1FlChcPGH1qCtpwqvI9-07jl7l49mMCA7IwxwvQpTfUQllyVy2TyMPl02KMXdje8EXcXN8XC4fJ1DNp5Pg-W41DOlodlii4MTSeuApOx1-ONk9SNqyDQlI3a8TSxyDXuvwHmCQKyisUhDBEpNbgH4OtgChEBhCjEL2hepHl3kvhc_ASyvkM7ZWVmXYYByxg8xi7oJwqMRZR5nvUYIOSoO0-SbbWrrKTBt6DkMM-QgT8aXqfGegJTynuhsTszh4LwpDFjdkcSMyo01j8U3WWzbrVP6jwVt06U1l31yT_ZOMQZdv3ULnNrt7vDc0n0dHn56ze82eNwVkvmBr9WweXiJoqt2rxT9xBV9RBHM
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Influence+of+Ga+%2B+ion+irradiation+on+thermal+relaxation+of+exchange+bias+field+in+exchange-coupled+CoFe%2FIrMn+bilayers&rft.jtitle=Chinese+physics+B&rft.au=Qi%2C+Xian-Jin&rft.au=Wang%2C+Yin-Gang&rft.au=Miao%2C+Xue-Fei&rft.au=Li%2C+Zi-Quan&rft.date=2011-05-01&rft.issn=1674-1056&rft.volume=20&rft.issue=5&rft.spage=57503&rft_id=info:doi/10.1088%2F1674-1056%2F20%2F5%2F057503&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_20_5_057503
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg