Influence of Ga^＋ ion irradiation on thermal relaxation of exchange bias field in exchange-coupled CoFe/IrMn bilayers

This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 20; no. 5; pp. 388 - 392
Main Author 祁先进 王寅岗 缪雪飞 李子全 黄一中
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
Subjects
交换偏置场
交换耦合
热弛豫
照射
磁控溅射沉积
离子辐照
衬底表面
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/5/057503

Cover

More Information
Summary:This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.
Bibliography:This paper reports that the CoFe/IrMn bilayers are deposited by magnetron sputtering on the surfaces of thermallyoxidized Si substrates. It investigates the thermal relaxations of both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers by means of holding the bilayers in a negative saturation field. The results show that exchange bias field decreases with the increase of holding time period for both non-irradiated and Ca^＋ ion irradiated CoFe/IrMn bilayers. Exchange bias field is also found to be smaller upon irradiation at higher ion dose. This reduction of exchange bias field is attributed to the change of energy barrier induced by ion-radiation.
11-5639/O4
Qi Xian-Jin,Wang Yin-Gang,Miao Xue-Fei,Li Zi-Quan,Huang Yi-Zhong a） College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China b） Department of Materials, Oxford University, Oxford OX1 3PH, UK c） School of Materials Science and Engineering, Nanyang Technological University, Singapore
thermal relaxation, exchange bias, ion irradiation, energy barrier
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/5/057503