Molecular Dynamical Simulations on a-C：H Film Growth from C and H Atomic Flux： Effect of Incident Energy

• Published in: Chinese physics letters Vol. 27; no. 8; pp. 228 - 231
• Main Author: 权伟龙 李红轩 赵飞 吉利 杜雯 周惠娣 陈建敏
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2010
• Subjects: Adsorption; Film growth; Flux; H原子; Implantation; Nuclear power generation; Simulation; Surface chemistry; 交流; 入射能量; 分子动力学模拟; 氢原子; 流量; 薄膜生长; 表面吸附
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/27/8/088102

Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C：H film growth from C and tt atomic flux. Our simulations show that the film growth at low incident energy （1 eV） is dominated by the adsorption of H and C atoms. At moderate incident energy （10 and 20eV）, the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy （30 and 40eV）, the a-C：H film growth is a two-step process： one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.