Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that...

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Bibliographic Details
Published inChinese physics letters Vol. 27; no. 4; pp. 223 - 226
Main Author 王启亮 吕宪义 李柳暗 成绍恒 李红东
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2010
Subjects
Chemical vapor deposition
Deposition
Diamond films
Graphite
Infrared
Methane
Microwave plasmas
Transmittance
微波等离子体化学气相沉积
扫描电子显微镜
红外透过率
金刚石薄膜
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/27/4/047802

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Summary:Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum （Mo） as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm^- 1.
Bibliography:TN304.18
11-1959/O4
TB43
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/4/047802