Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process

A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production proces...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 6; pp. 43 - 46
Main Author 汤叶华 周春兰 王文静 周肃 赵彦 赵雷 李海玲 闫保军 陈静伟 费建明 曹红彬
Format Journal Article
LanguageEnglish
Published 01.06.2012
Subjects
Dopants
丝网印刷
化学蚀刻
工艺制作
硅太阳能电池
纳米多孔结构
表征
输出特性
黑色
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ISSN1674-4926
DOI10.1088/1674-4926/33/6/064007

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Summary:A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.
Bibliography:11-5781/TN
black silicon noble metal nanoparticles catalysis nanosized porous solar cells
A silicon（Si） surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold（Au） nanoparticles on p-type Cz-Si（100）.The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/6/064007