APA (7th ed.) Citation

Onoda, S., Hoshino, N., Tsuchida, H., Makino, T., & Ohshima, T. (2016). Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes. Materials Science Forum, 858, 753-756. https://doi.org/10.4028/www.scientific.net/MSF.858.753

Chicago Style (17th ed.) Citation

Onoda, Shinobu, Norihiro Hoshino, Hidekazu Tsuchida, Takahiro Makino, and Takeshi Ohshima. "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes." Materials Science Forum 858 (2016): 753-756. https://doi.org/10.4028/www.scientific.net/MSF.858.753.

MLA (9th ed.) Citation

Onoda, Shinobu, et al. "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes." Materials Science Forum, vol. 858, 2016, pp. 753-756, https://doi.org/10.4028/www.scientific.net/MSF.858.753.