Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended o...

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Bibliographic Details
Published inMaterials Science Forum Vol. 858; pp. 753 - 756
Main Authors Onoda, Shinobu, Hoshino, Norihiro, Tsuchida, Hidekazu, Makino, Takahiro, Ohshima, Takeshi
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 24.05.2016
Subjects
Barriers
Charge
Collection
Diodes
Epitaxy
Ion irradiation
Ionization
Simulation
Schottky Barrier Diode (SBD)
Impact Ionization
Single Event Effect
Silicon Carbide (SiC)
Heavy-Ion Irradiation
Radiation Tolerance
Online AccessGet full text
ISBN3035710422
9783035710427
ISSN0255-5476
1662-9752
1662-9752
DOI10.4028/www.scientific.net/MSF.858.753

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Summary:The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.
Bibliography:Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
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ISBN:3035710422
9783035710427
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.753