Numerical simulation of chemical vapor deposition reaction in polysilicon reduction furnace

• Published in: Journal of Central South University Vol. 23; no. 1; pp. 44 - 51
• Main Authors: Xia, Xiao-xia, Wang, Zhi-qi, Liu, Bin
• Format: Journal Article
• Language: English
• Published: Changsha Central South University 01.01.2016
• Subjects: Engineering; Metallic Materials; chemical vapor deposition; polysilicon reduction furnace; silicon growth rate
• ISSN: 2095-2899; 2227-5223
• DOI: 10.1007/s11771-016-3047-7

Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H 2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H 2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl 3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H 2 mole fraction is 0.8-0.85. With the growth of silicon rod height, SiHCl 3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl 3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.