Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes

The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide ( MoO x ) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p -type doping effects in the organic films and carrier concentratio...

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Published inJournal of applied physics Vol. 105; no. 3; pp. 033717 - 033717-4
Main Authors Wu, Chih-I, Lin, Chang-Ting, Lee, Guan-Ru, Cho, Ting-Yi, Wu, Chung-Chih, Pi, Tun-Wen
Format Journal Article
LanguageEnglish
Published American Institute of Physics 01.02.2009
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ISSN0021-8979
1089-7550
DOI10.1063/1.3077170

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Summary:The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide ( MoO x ) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p -type doping effects in the organic films and carrier concentration increase at the anode interfaces cause the hole injection barrier lowering. The gap states, which help carrier injection from the anodes, resulted from the oxygen deficiency in MoO x due to the interaction of organic materials and MoO x .
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3077170