Plasma etching of SiO2 contact hole using perfluoropropyl vinyl ether and perfluoroisopropyl vinyl ether

• Published in: The Korean journal of chemical engineering Vol. 39; no. 1; pp. 63 - 68
• Main Authors: You, Sanghyun, Kim, Jun-Hyun, Kim, Chang-Koo
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.01.2022; Springer Nature B.V; 한국화학공학회
• Subjects: Argon plasma; Biotechnology; Catalysis; Chemistry; Chemistry and Materials Science; Contact holes; Faraday cage; Industrial Chemistry/Chemical Engineering; Materials Science; Perfluoro compounds; Plasma etching; Rapid Communication; Silicon dioxide; Sputtering; Vinyl ethers; 화학공학; PPVE; Contact Hole; Angular Dependence; Plasma Etching; PIPVE
• ISSN: 0256-1115; 1975-7220
• DOI: 10.1007/s11814-021-0987-x

Perfluoropropyl vinyl ether (PPVE) and perfluoroisopropyl vinyl ether (PIPVE) are used for plasma etching of SiO 2 contact holes. When etching is performed on blanket SiO 2 samples, the etch rates in the PPVE/Ar plasma are higher than those in the PIPVE/Ar plasma at all bias voltages. In contrast, when hole-pattern (100 nm in diameter) SiO 2 samples are etched, the etch rates of the SiO 2 hole in the PIPVE/Ar plasma are higher than those of the SiO 2 hole in the PPVE/Ar plasma. This can be attributed to excess production of CF 3 + ions in PIPVE than in PPVE, and higher contribution of physical sputtering to plasma etching in PIPVE than in PPVE. The angular dependence of the SiO 2 etch rates examined using a Faraday cage reveals that the effect of physical sputtering on the SiO 2 etching is greater in the PIPVE/Ar plasma than in the PPVE/Ar plasma.