Wafer size effect on material removal rate in copper CMP process

• Published in: Journal of mechanical science and technology Vol. 31; no. 6; pp. 2961 - 2964
• Main Authors: Yuh, Minjong, Jang, Soocheon, Park, Inho, Jeong, Haedo
• Format: Journal Article
• Language: English
• Published: Seoul Korean Society of Mechanical Engineers 01.06.2017; Springer Nature B.V; 대한기계학회
• Subjects: Chemical etching; Chemical-mechanical polishing; Control; Copper; Dynamical Systems; Electromigration; Engineering; Industrial and Production Engineering; Infrared detectors; Manufacturing; Material removal rate (machining); Mechanical Engineering; Piezoelectricity; Size effects; Sliding; Vibration; 기계공학; Dynamic etch rate; Chemical mechanical planarization (CMP); Wafer size; Thermal effect; Copper; Material removal rate (MRR)
• ISSN: 1738-494X; 1976-3824
• DOI: 10.1007/s12206-017-0539-9

The semiconductor industry has employed the Chemical mechanical planarization (CMP) to enable surface topography control. Copper has been used to build interconnects because of its low-resistivity and high-electromigration. In this study, the effect of wafer size on the Material removal rate (MRR) in copper CMP process was investigated. CMP experiments were conducted using copper blanket wafers with diameter of 100, 150, 200 and 300 mm, while temperature and friction force were measured by infrared and piezoelectric sensors. The MRR increases with an increase in wafer size under the same process conditions. The wafer size increased the sliding distance of pad, resulting in an increase in the process temperature. This increased the process temperature, accelerating the chemical etching rate and the dynamic etch rate. The sliding distance of the pad was proportional to the square of the wafer radius; it may be used to predict CMP results and design a CMP machine.