Simulation and analysis of Si deposition in turbulent CVD reactors
Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers o...
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| Published in | Journal of semiconductors Vol. 35; no. 8; pp. 33 - 37 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/35/8/083002 |
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| Abstract | Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition. |
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| AbstractList | Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition. Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh (Ra) and Reynolds (Re) numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition. |
| Author | 魏家星 徐睿 禹燕飞 侯金亮 李昌烽 |
| AuthorAffiliation | School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China |
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| Cites_doi | 10.1016/j.jcrysgro.2007.10.016 10.1016/S0065-2156(08)70255-2 10.1063/1.1651934 10.1016/S0022-0248(00)00033-6 10.1016/0045-7930(94)00032-T 10.1103/PhysRevA.36.5870 10.1016/j.jcrysgro.2010.11.070 10.1016/S0142-727X(03)00020-1 |
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| Notes | chemical vapor deposition; turbulence; deposition rate; natural convection 11-5781/TN Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition. Wei Jiaxing Xu Rui Yu Yanfei Hou Jinliang and Li Changfeng（School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China） ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 1 12 3 4 Giling L J (5) 1985 6 7 Liu S B (8) 2013; 42 (9) 2003 Zuo R (2) 2008; 29 10 |
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| SubjectTerms | Computational fluid dynamics Computer simulation CVD Deposition Mathematical models Reactors Semiconductors Silicon Turbulence 卧式反应器 反应模式 数值模拟 时间平均 沉积速率 路径损耗 |
| Title | Simulation and analysis of Si deposition in turbulent CVD reactors |
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