Simulation and analysis of Si deposition in turbulent CVD reactors

Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers o...

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Published inJournal of semiconductors Vol. 35; no. 8; pp. 33 - 37
Main Author 魏家星 徐睿 禹燕飞 侯金亮 李昌烽
Format Journal Article
LanguageEnglish
Published 01.08.2014
Subjects
Computational fluid dynamics
Computer simulation
CVD
Deposition
Mathematical models
Reactors
Semiconductors
Silicon
Turbulence
卧式反应器
反应模式
数值模拟
时间平均
沉积速率
路径损耗
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ISSN1674-4926
DOI10.1088/1674-4926/35/8/083002

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Summary:Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition.
Bibliography:chemical vapor deposition; turbulence; deposition rate; natural convection
11-5781/TN
Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition.
Wei Jiaxing Xu Rui Yu Yanfei Hou Jinliang and Li Changfeng（School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/8/083002