Effect of glycine on copper CMP

• Published in: International Journal of Precision Engineering and Manufacturing-Green Technology, 3(2) Vol. 3; no. 2; pp. 155 - 159
• Main Authors: Jang, Soocheon, Jeong, Haedo, Yuh, Minjong, Park, Inho, Park, Jaehong
• Format: Journal Article
• Language: English
• Published: Seoul Korean Society for Precision Engineering 01.04.2016; Springer Nature B.V; 한국정밀공학회
• Subjects: Chemical reactions; Chemical-mechanical polishing; Circuit boards; Copper; Corrosion currents; Corrosion products; Electrochemical analysis; Electrochemistry; Electronic devices; Energy Efficiency; Engineering; Glycine; Industrial and Production Engineering; Miniaturization; Printed circuits; Slurries; Surface roughness; Sustainable Development; 기계공학; Polarization resistance; Chemical mechanical planarization (CMP); Glycine; Complexing agent; Tafel extrapolation
• ISSN: 2288-6206; 2198-0810
• DOI: 10.1007/s40684-016-0019-1

Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.