Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux pro...
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| Published in | Chinese physics B Vol. 23; no. 11; pp. 612 - 615 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/11/118503 |
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| Abstract | Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. |
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| AbstractList | Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. |
| Author | 肖尧 郭红霞 张凤祁 赵雯 王燕萍 张科营 丁李利 范雪 罗尹虹 王园明 |
| AuthorAffiliation | State Key Laboratory of Intense Pulsed Radiation Simulation and Ett＇ect, Northwest Institute of Nuclear Technology, Xi＇ an 710024, China h） Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China |
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| Cites_doi | 10.1109/23.340544 10.1109/23.45444 10.1109/TNS.2004.839301 10.7498/aps.60.046106 10.1088/1674-1056/20/6/068501 10.7498/aps.57.1266 10.1088/1674-1056/22/2/028501 10.7498/aps.60.056105 10.1109/TNS.2007.893425 10.1109/TNS.2010.2046752 10.7498/aps.60.116103 10.1109/TNS.2006.877896 10.7498/aps.63.018501 10.7498/aps.58.8651 10.7498/aps.62.188502 |
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| DocumentTitleAlternate | Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
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| Notes | Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao We Wang Yan-Ping, Zhang Ke-Ying, Ding Li-Li, Fan Xue, Luo Yin-Hong, and Wang Yuan-Ming（ a） State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi＇ an 710024, China b ） xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China C ） State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China single event upset, total dose, static random access memory, imprint effect 11-5639/O4 Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | Xiao Y (12) 2014; 63 Koga R (11) 2009; 56 Tang X X (18) 2008; 57 Zhang K Y (14) 2011; 20 Campbell A B (7) 1984; 30 3 Liu Z L (17) 2011; 60 4 Zhang K Y (13) 2009; 58 He B P (16) 2011; 60 5 Liu F Y (2) 2011; 60 Ding L L (15) 2013; 62 8 9 He B P (6) 2011; 60 Zhang K Y (1) 2013; 22 10 |
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| SubjectTerms | Asymmetry CMOS CMOS晶体管 Cross sections (physics) Flux Leakage current Proton irradiation Single event upsets Static random access memory Synergistic effect 事件 协同效应 总剂量 灵敏度 累积剂量 质子辐射 静态随机存取存储器 |
| Title | Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
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