Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux pro...

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Published inChinese physics B Vol. 23; no. 11; pp. 612 - 615
Main Author 肖尧 郭红霞 张凤祁 赵雯 王燕萍 张科营 丁李利 范雪 罗尹虹 王园明
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Asymmetry
CMOS
CMOS晶体管
Cross sections (physics)
Flux
Leakage current
Proton irradiation
Single event upsets
Static random access memory
Synergistic effect
事件
协同效应
总剂量
灵敏度
累积剂量
质子辐射
静态随机存取存储器
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/11/118503

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Summary:Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
Bibliography:Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao We Wang Yan-Ping, Zhang Ke-Ying, Ding Li-Li, Fan Xue, Luo Yin-Hong, and Wang Yuan-Ming（ a） State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi＇ an 710024, China b ） xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences, Urumqi 830011, China C ） State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 61005, China
single event upset, total dose, static random access memory, imprint effect
11-5639/O4
Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/11/118503