True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. Fo...

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Bibliographic Details
Published inApplied physics express Vol. 11; no. 3; pp. 34103 - 34106
Main Authors Skierbiszewski, Czeslaw, Muziol, Grzegorz, Nowakowski-Szkudlarek, Krzesimir, Turski, Henryk, Siekacz, Marcin, Feduniewicz-Zmuda, Anna, Nowakowska-Szkudlarek, Anna, Sawicka, Marta, Perlin, Piotr
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2018
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ISSN1882-0778
1882-0786
DOI10.7567/APEX.11.034103

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Summary:We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10−4 Ω·cm2.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.11.034103