李宁, 郑. 刘. 于. (2012). Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide. Chinese physics B, 21(11), 361-366. https://doi.org/10.1088/1674-1056/21/11/116104
Chicago Style (17th ed.) Citation李宁, 郑中山 刘忠立 于芳. "Total Dose Radiation Response of Modified Commercial Silicon-on-insulator Materials with Nitrogen Implanted Buried Oxide." Chinese Physics B 21, no. 11 (2012): 361-366. https://doi.org/10.1088/1674-1056/21/11/116104.
MLA (9th ed.) Citation李宁, 郑中山 刘忠立 于芳. "Total Dose Radiation Response of Modified Commercial Silicon-on-insulator Materials with Nitrogen Implanted Buried Oxide." Chinese Physics B, vol. 21, no. 11, 2012, pp. 361-366, https://doi.org/10.1088/1674-1056/21/11/116104.
Warning: These citations may not always be 100% accurate.