Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high freque...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 11; pp. 361 - 366
Main Author 郑中山 刘忠立 于芳 李宁
Format Journal Article
LanguageEnglish
Published 01.11.2012
Subjects
Annealing
Fourier transforms
Implantation
Irradiation
Oxides
Radiation hardness
Secondary ion mass spectrometry
Wafers
商业
埋氧层
总剂量
植入
氮离子注入
硅材料
绝缘体上硅
辐射响应
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/11/116104

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Summary:Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.
Bibliography:Zheng Zhong-Shan, Liu Zhong-Li, Yu Fang, and Li Ning Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
silicon-on-insulator, total dose radiation hardness, nitrogen implantation
11-5639/O4
Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/11/116104