Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude diff...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 6; pp. 184 - 187
Main Author 范茜 陈后鹏 王倩 王月青 吕士龙 刘燕 宋志棠 冯高明 刘波
Format Journal Article
LanguageEnglish
Published 01.06.2015
Subjects
Arrays
CMOS
CMOS技术
Performance enhancement
Phase change
Programming
Random access memory
Strategy
Thermal simulation
参数设置
存储器阵列
性能改进
相位变化
编程方法
随机存取
高分辨透射电子显微镜
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/6/068301

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Summary:A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
Bibliography:A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
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FAN Xi, CHEN Hou-Peng, WANG Qian, WANG Yue-Qing, LV Shi-Long, LIU Yan, SONG Zhi-Tang, FENG Gao-Ming, LIU Bo（ 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ; 2 Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ; 3 University of Chinese Academy of Sciences, Beijing 100049 ; 4 United Laboratory, Semiconductor Manufacturing International Corporation, Shanghai 201203）
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/6/068301