Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be...

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Published inChinese physics B Vol. 23; no. 9; pp. 409 - 413
Main Author 武玫 郑大勇 王媛 陈伟伟 张凯 马晓华 张进成 郝跃
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
AlGaN
Aluminum gallium nitrides
Barriers
Density
Gallium nitrides
HEMT器件
High electron mobility transistors
Mathematical models
Semiconductor devices
Thermionic emission
Transport
传输机制
温度范围
热电子发射
电流增益
肖特基接触
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/9/097307

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Summary:The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
Bibliography:Wu Mei, Zheng Da-Yong, Wang Yuan, Chen Wei-Wei, Zhang Kai, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue（1. School of Microelectronics, Xidian University, Xi ＇an 710071, China; 2. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China; 3. The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510610, China）
AlGaN/GaN HEMTs, Schottky contacts, forward current transport mechanism, temperature dependence
The behavior of Schottky contacts in AlGaN/GaN high electron mobility transistors （HEMTs） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.
11-5639/O4
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/9/097307