Preparation of graphene on Cu foils by ion implantation with negative carbon clusters
We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950?C in vacuum. Raman spectroscopy reveals IG/I2 Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multil...
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Published in | Chinese physics B Vol. 24; no. 1; pp. 528 - 530 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
2015
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Subjects | |
Online Access | Get full text |
ISSN | 1674-1056 2058-3834 1741-4199 |
DOI | 10.1088/1674-1056/24/1/018502 |
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Summary: | We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950?C in vacuum. Raman spectroscopy reveals IG/I2 Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis. |
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Bibliography: | ion implantation; carbon clusters; graphene; copper foil Li Hui,Shang Yan-Xia,Zhang Zao-Di,Wang Ze-Song,Zhang Rui,Fu De-Jun(School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education,Wuhan University, Wuhan 430072, China) 11-5639/O4 We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions,followed by annealing at 950?C in vacuum. Raman spectroscopy reveals IG/I2 Dvalues varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-1056 2058-3834 1741-4199 |
DOI: | 10.1088/1674-1056/24/1/018502 |