刘江涛, 肖. 何. 张. 高. (2012). Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current. Chinese physics B, 21(6), 468-471. https://doi.org/10.1088/1674-1056/21/6/067304
Chicago Style (17th ed.) Citation刘江涛, 肖文波 何兴道 张志敏 高益庆. "Far-infrared Electroluminescence Characteristics of an Si-based Photodiode Under a Forward DC Bias Current." Chinese Physics B 21, no. 6 (2012): 468-471. https://doi.org/10.1088/1674-1056/21/6/067304.
MLA (9th ed.) Citation刘江涛, 肖文波 何兴道 张志敏 高益庆. "Far-infrared Electroluminescence Characteristics of an Si-based Photodiode Under a Forward DC Bias Current." Chinese Physics B, vol. 21, no. 6, 2012, pp. 468-471, https://doi.org/10.1088/1674-1056/21/6/067304.
Warning: These citations may not always be 100% accurate.