Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investi-gated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence int...

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Published inChinese physics B Vol. 21; no. 6; pp. 468 - 471
Main Author 肖文波 何兴道 张志敏 高益庆 刘江涛
Format Journal Article
LanguageEnglish
Published 01.06.2012
Subjects
Bias
Defects
Direct current
Electroluminescence
Fittings
Image detection
Infrared imagery
Photodiodes
Power law
偏置电流
光电二极管
发光强度
电致发光特性
直流
红外图像
远红外线
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/6/067304

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Summary:At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investi-gated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.
Bibliography:At room temperature, the bias dependence of a far-infrared electroluminescence image of a photodiode is investi-gated in the dark condition. The results show that the electroluminescence image can be used to detect defects in the photodiode. Additionally, it is found that the electroluminescence intensity has a power law dependence on the dc bias current. The photodiode ideality factor could be obtained by a fitting a relationship between the electroluminescence intensity and the bias current. The device defect levels will be easily determined according to the infrared image and the extracted ideality factor value. This work is of guiding significance for current solar cell testing and research.
photodiode, electroluminescence images, electroluminescence intensity
Xiao Wen-Bo, He Xing-Dao, Zhang Zhi-Min, Gao Yi-Qing, and Liu Jiang-Tao（ a） Key Laboratory of Nondestructive （lest （Ministry of Education）, Nanchang Hangkong University, Nanchang 330063, China b） Department of Physics, Nanchang University, Nanehang 330031, China
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/6/067304