Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were inve...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 9; pp. 440 - 444
Main Author 滕晓云 吴艳华 于威 高卫 傅广生
Format Journal Article
LanguageEnglish
Published 01.09.2012
Subjects
Density
Heterojunctions
Illumination
Lasers
Molecular beam epitaxy
Silicon
Space charge
Transport
Zinc oxide
ZnO膜
分子束外延技术
分子束外延生长
异质结
激光
电流输运
短路电流密度
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/9/097105

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Summary:The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.
Bibliography:Teng Xiao-Yun, Wu Yan-Hua, Yu Wei, Gao Wei, and Fu Guang-Sheng College of Physics Science and Technology, University of Hebei University, Baoding 071002, China
The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.
11-5639/O4
ZnO/Si heterostructure, current transport, laser molecular beam epitaxy
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/9/097105