Sunlight loss for femtosecond microstructured silicon with two impurity bands
Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of...
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| Published in | Chinese physics B Vol. 20; no. 7; pp. 177 - 181 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.07.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/20/7/074202 |
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| Abstract | Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis. |
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| AbstractList | Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te0(0.307 eV) and Te+(0.411 eV) are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis. Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis. |
| Author | 方健 陈长水 王芳 刘颂豪 |
| AuthorAffiliation | Institute of Biophotonics, South China Normal University, Guangzhou 510631, China |
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| Cites_doi | 10.1016/j.matlet.2009.09.052 10.1063/1.122241 10.1088/1674-1056/20/3/037306 10.1088/1009-1963/12/6/304 10.1134/S1054660X08100071 10.1103/PhysRevLett.78.5014 10.1088/1009-1963/15/11/042 10.1088/1674-1056/19/3/038601 10.1016/j.apsusc.2007.09.106 10.1007/s00339-004-2676-0 |
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| DocumentTitleAlternate | Sunlight loss for femtosecond microstructured silicon with two impurity bands |
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| Notes | Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis. black silicon, solar cell with impurity bands, loss of sunlight 11-5639/O4 Fang Jian, Chen Chang-Shui, Wang Fang, Liu Song-Hao Institute of Biophotonics, South China Normal University, Guangzhou 510631, China ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
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| References | 11 Brown A S (13) 2004; 5 15 Crouch C H (5) 2004; 79 Sheng G F (3) 2003; 12 Meng W Z (4) 2006; 15 Feng Z X (9) 2010; 19 Wang F (14) 2010 1 2 Jiao B C (12) 2011; 20 Green M A (10) 2001; 9 7 Tull B R (6) 2009; 96 8 |
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| SubjectTerms | Band theory Bands Femtosecond Impurities Photovoltaic cells Silicon Solar cells Sunlight 亏损 含硫气体 微结构硅 杂质带 硅太阳能电池 硅片表面 阳光 飞秒激光脉冲 |
| Title | Sunlight loss for femtosecond microstructured silicon with two impurity bands |
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