Sunlight loss for femtosecond microstructured silicon with two impurity bands

Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 7; pp. 177 - 181
Main Author 方健 陈长水 王芳 刘颂豪
Format Journal Article
LanguageEnglish
Published 01.07.2011
Subjects
Band theory
Bands
Femtosecond
Impurities
Photovoltaic cells
Silicon
Solar cells
Sunlight
亏损
含硫气体
微结构硅
杂质带
硅太阳能电池
硅片表面
阳光
飞秒激光脉冲
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/7/074202

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Summary:Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.
Bibliography:Black silicon, produced by irradiating the surface of a silicon wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, is widely believed to be a potential material for efficient multi-intermediate-band silicon solar cells. Taking chalcogen as an example, we analyse the loss of sunlight for silicon with two impurity bands and we find that loss of the sunlight can be minimized to 0.332 when Te^0（0.307 eV） and Te＋（0.411 eV） are doped into microstructured silicon. Finally, problems needed to be resolved in analysing the relationship between conversion efficiency of the ideal four-band silicon solar cell and the position of the introduced two intermediated bands in silicon according to detailed balance theory are pointed out with great emphasis.
black silicon, solar cell with impurity bands, loss of sunlight
11-5639/O4
Fang Jian, Chen Chang-Shui, Wang Fang, Liu Song-Hao Institute of Biophotonics, South China Normal University, Guangzhou 510631, China
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/7/074202