A 45-channel 100 GHz AWG based on Si nanowire waveguides

A 45-channel 100 GHz arrayed waveguide grating（AWG） based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively,...

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Published inOptoelectronics letters Vol. 13; no. 3; pp. 161 - 164
Main Author 李凯丽 张家顺 安俊明 李建光 王亮亮 王玥 吴远大 尹小杰 胡雄伟
Format Journal Article
LanguageEnglish
Published Tianjin Tianjin University of Technology 01.05.2017
Springer Nature B.V
Subjects
Crosstalk
Inductively coupled plasma
Insertion loss
Lasers
Nanowires
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Transfer functions
Waveguides
Online AccessGet full text
ISSN1673-1905
1993-5013
DOI10.1007/s11801-017-7051-4

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Summary:A 45-channel 100 GHz arrayed waveguide grating（AWG） based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator（SOI） substrate by deep ultraviolet lithography（DUV） and inductively coupled plasma（ICP） etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB.
Bibliography:crosstalk waveguide ultraviolet lithography spacing inductively grating etching insertion insulator
12-1370/TN
A 45-channel 100 GHz arrayed waveguide grating（AWG） based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator（SOI） substrate by deep ultraviolet lithography（DUV） and inductively coupled plasma（ICP） etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB.
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ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-017-7051-4