An 8-18 GHz broadband high power amplifier

An 8-18 GHz broadband high power amphtier （HPA） with a hybrid integrated circuit （HIC） is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AIN material with goo...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 11; pp. 99 - 102
Main Author 王立发 杨瑞霞 吴景峰 李彦磊
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Broadband
Frequency ranges
Gain
Gallium arsenide
GHz
Multilayers
Noise levels
Power amplifiers
Semiconductors
兰格耦合器
功率输出
宽带
混合集成电路
输入功率
频率范围
高功率放大器
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ISSN1674-4926
DOI10.1088/1674-4926/32/11/115006

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Summary:An 8-18 GHz broadband high power amphtier （HPA） with a hybrid integrated circuit （HIC） is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AIN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave （CW） outputted by the power amplifier is more than 39 dBm within the frequency range of8-13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of I 1.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm^3.
Bibliography:An 8-18 GHz broadband high power amphtier （HPA） with a hybrid integrated circuit （HIC） is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AIN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave （CW） outputted by the power amplifier is more than 39 dBm within the frequency range of8-13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of I 1.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm^3.
Wang Lifa, Yang Ruixia, Wu Jingfeng, Li Yanlei 1 College of Information Engineering, Hebei University of Technology, Tianjin 300130, China 2Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
11-5781/TN
wideband; Lange coupler; hybrid integrated circuit; power amplifier
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/11/115006