Proton radiation effect of NPN-input operational amplifier under different bias conditions

NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton rad...

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Published inJournal of semiconductors Vol. 36; no. 12; pp. 114 - 118
Main Author 姜柯 陆妩 郭旗 何承发 王信 刘默寒 李小龙
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.12.2015
Subjects
Bias
Deposition
Devices
different biases
Ionization
Irradiation
NPN
NPN input bipolar operational amplifier
Operational amplifiers
Proton irradiation
proton radiation
radiation effect
Semiconductors
偏置条件
射线照射
质子辐射
辐射效应
辐射敏感度
输入
运算放大器
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ISSN1674-4926
DOI10.1088/1674-4926/36/12/125001

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Summary:NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current（±Icc）is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation.
Bibliography:NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current（±Icc）is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation.
NPN input bipolar operational amplifier; proton radiation; different biases; radiation effect
11-5781/TN
Jiang Ke, Lu Wu, Guo Qi, He Chengfa, Wang Xin, Liu Mohan, Li Xiaolong（1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2Xinjiang Key Laboratory ＆Electronic Information Material and Device, Urumqi 830011, China 3University of Chinese Academy of Sciences, Beijing 100049, China）
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/12/125001