Modeling and characterization of shielded low loss CPWs on 65 nm node silicon

Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the freq...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 6; pp. 55 - 59
Main Author 王洪瑞 杨东旭 张莉 张雷 余志平
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
CMOS
CMOS技术
Coplanar waveguides
Frequency bands
Grounds
Mathematical models
Semiconductors
Shields
Silicon
屏蔽
建模
损耗
物理模型
纳米
节点
表征
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/32/6/064009

Cover

More Information
Summary:Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the frequency-dependent per-unit-length L,C,R and G parameters.Starting with a basic CPW structure,the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model.The accuracy of the model is confirmed by experimental results.
Bibliography:Coplanar waveguides（CPWs）are promising candidates for high quality passive devices in millimeterwave frequency bands.In this paper,CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology.A physical-based model is proposed to describe the frequency-dependent per-unit-length L,C,R and G parameters.Starting with a basic CPW structure,the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model.The accuracy of the model is confirmed by experimental results.
Wang Hongrui,Yang Dongxu,Zhang Li,Zhang Lei , Yu Zhiping Institute of Microelectronics,Tsinghua University,Beijing 100084,China
11-5781/TN
CMOS; CPW; shield; model
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/6/064009