Modeling and analysis of power extraction circuits for passive UHF RFID applications

Modeling and analysis of far field power extraction circuits for passive UHF RF identification （RFID） applications are presented. A mathematical model is derived to predict the complex nonlinear performance of UHF voltage multiplier using Schottky diodes. To reduce the complexity of the proposed mod...

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Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 1; pp. 90 - 99
Main Author 樊勃 戴宇杰 张小兴 吕英杰
Format Journal Article
LanguageEnglish
Published IOP Publishing 2009
Subjects
二极管
功率
半导体
电压倍增器
超高频射频识别
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ISSN1674-4926
DOI10.1088/1674-4926/30/1/015011

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Summary:Modeling and analysis of far field power extraction circuits for passive UHF RF identification （RFID） applications are presented. A mathematical model is derived to predict the complex nonlinear performance of UHF voltage multiplier using Schottky diodes. To reduce the complexity of the proposed model, a simple linear approximation for Schottky diode is introduced. Measurement results show considerable agreement with the values calculated by the proposed model. With the derived model, optimization on stage number for voltage multiplier to achieve maximum power conversion efficiency is discussed. Furthermore, according to the Bode-Fano criterion and the proposed model, a limitation on maximum power up range for passive UHF RFID power extraction circuits is also studied.
Bibliography:voltage multiplier
power extraction circuits; passive UHF RFID; model; voltage multiplier; power conversion efficiency;power up range
passive UHF RFID
power extraction circuits
power conversion efficiency
power up range
model
11-5781/TN
TN304.23
TN31
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/30/1/015011