Facile Dry Surface Cleaning of Graphene by UV Treatment
Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maxim...
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Published in | Journal of the Korean Physical Society Vol. 72; no. 9; pp. 1045 - 1051 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Seoul
The Korean Physical Society
01.05.2018
Springer Nature B.V 한국물리학회 |
Subjects | |
Online Access | Get full text |
ISSN | 0374-4884 1976-8524 |
DOI | 10.3938/jkps.72.1045 |
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Summary: | Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maximizing its performance in electronic applications. Graphene grown by chemical vapor deposition is widely used but it produces polymeric residue following wet/chemical transfer process, which strongly affects its intrinsic electrical properties and limits the doping efficiency by adsorption. Here, we introduce a facile dry-cleaning method based on UV irradiation to eliminate the organic residues even after device fabrication. Through surface topography, Raman analysis, and electrical transport measurement characteristics, we confirm that the optimized UV treatment can recover the clean graphene surface and improve graphene-FET performance more effectively than thermal treatment. We propose our UV irradiation method as a systematically controllable and damage-free post process for application in large-area devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 0374-4884 1976-8524 |
DOI: | 10.3938/jkps.72.1045 |