Facile Dry Surface Cleaning of Graphene by UV Treatment

Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maxim...

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Published inJournal of the Korean Physical Society Vol. 72; no. 9; pp. 1045 - 1051
Main Authors Kim, Jin Hong, Haidari, Mohd Musaib, Choi, Jin Sik, Kim, Hakseong, Yu, Young-Jun, Park, Jonghyurk
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.05.2018
Springer Nature B.V
한국물리학회
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ISSN0374-4884
1976-8524
DOI10.3938/jkps.72.1045

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Summary:Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maximizing its performance in electronic applications. Graphene grown by chemical vapor deposition is widely used but it produces polymeric residue following wet/chemical transfer process, which strongly affects its intrinsic electrical properties and limits the doping efficiency by adsorption. Here, we introduce a facile dry-cleaning method based on UV irradiation to eliminate the organic residues even after device fabrication. Through surface topography, Raman analysis, and electrical transport measurement characteristics, we confirm that the optimized UV treatment can recover the clean graphene surface and improve graphene-FET performance more effectively than thermal treatment. We propose our UV irradiation method as a systematically controllable and damage-free post process for application in large-area devices.
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ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.72.1045