Implantation of bubble garnets

• Published in: Thin solid films Vol. 114; no. 1; pp. 3 - 31
• Main Author: Gerard, P.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.1984
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(84)90334-1

A review is given of ion implantation in bubble garnets. After a short introduction to the material, the implantation effects and the most frequently used characterization techniques are related briefly. Then a general survey is made of three different kinds of implantation, which are neon, hydrogen and high dose implantations. Neon implantation only requires a very low dose, and therefore the effects are restricted to pure damage. Hydrogen implantation, which gives rise to an abnormally high anisotropy, is considered separately on account of its sustained interest for small bubble devices. Last but not least, garnets implanted with high doses of heavy ions and successively annealed at high temperature are dealt with. The last subject is new and promising as it can be applied to alter locally the garnet properties through doping.