Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films

Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric p...

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Published inCurrent applied physics Vol. 20; no. 12; pp. 1447 - 1452
Main Authors Nguyen, Bich Thuy, Won, Sung Sik, Chan Park, Bong, Jo, Yong Jin, Ahn, Chang Won, Kim, Ill Won, Kim, Tae Heon
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2020
한국물리학회
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Online AccessGet full text
ISSN1567-1739
1878-1675
1567-1739
DOI10.1016/j.cap.2020.07.004

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Abstract Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e31∗) of 2.43 C/m2. [Display omitted]
AbstractList Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e31∗) of 2.43 C/m2. [Display omitted]
Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn- 0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e*31) of 2.43 C/m2. KCI Citation Count: 0
Author Won, Sung Sik
Chan Park, Bong
Kim, Ill Won
Jo, Yong Jin
Ahn, Chang Won
Kim, Tae Heon
Nguyen, Bich Thuy
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Issue 12
Keywords Transverse piezoelectrics
Bi0.5Na0.5TiO3
Lead free
Cantilever
Thin film
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Snippet Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on...
Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on...
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SubjectTerms Bi0.5Na0.5TiO3
Cantilever
Lead free
Thin film
Transverse piezoelectrics
물리학
Title Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films
URI https://dx.doi.org/10.1016/j.cap.2020.07.004
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