Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films
Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric p...
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Published in | Current applied physics Vol. 20; no. 12; pp. 1447 - 1452 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.12.2020
한국물리학회 |
Subjects | |
Online Access | Get full text |
ISSN | 1567-1739 1878-1675 1567-1739 |
DOI | 10.1016/j.cap.2020.07.004 |
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Abstract | Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e31∗) of 2.43 C/m2.
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AbstractList | Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e31∗) of 2.43 C/m2.
[Display omitted] Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn- 0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e*31) of 2.43 C/m2. KCI Citation Count: 0 |
Author | Won, Sung Sik Chan Park, Bong Kim, Ill Won Jo, Yong Jin Ahn, Chang Won Kim, Tae Heon Nguyen, Bich Thuy |
Author_xml | – sequence: 1 givenname: Bich Thuy orcidid: 0000-0002-8841-443X surname: Nguyen fullname: Nguyen, Bich Thuy organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea – sequence: 2 givenname: Sung Sik surname: Won fullname: Won, Sung Sik organization: School of Engineering, Brown University, Providence, RI, 02912, USA – sequence: 3 givenname: Bong surname: Chan Park fullname: Chan Park, Bong organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea – sequence: 4 givenname: Yong Jin surname: Jo fullname: Jo, Yong Jin organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea – sequence: 5 givenname: Chang Won surname: Ahn fullname: Ahn, Chang Won organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea – sequence: 6 givenname: Ill Won surname: Kim fullname: Kim, Ill Won email: kimiw@ulsan.ac.kr organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea – sequence: 7 givenname: Tae Heon surname: Kim fullname: Kim, Tae Heon email: thkim79@ulsan.ac.kr organization: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea |
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Keywords | Transverse piezoelectrics Bi0.5Na0.5TiO3 Lead free Cantilever Thin film |
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Snippet | Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on... Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on... |
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SubjectTerms | Bi0.5Na0.5TiO3 Cantilever Lead free Thin film Transverse piezoelectrics 물리학 |
Title | Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films |
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