Transverse piezoelectric properties of Mn-doped Bi0.5Na0.5TiO3 thin films

• Published in: Current applied physics Vol. 20; no. 12; pp. 1447 - 1452
• Main Authors: Nguyen, Bich Thuy, Won, Sung Sik, Chan Park, Bong, Jo, Yong Jin, Ahn, Chang Won, Kim, Ill Won, Kim, Tae Heon
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2020; 한국물리학회
• Subjects: Bi0.5Na0.5TiO3; Cantilever; Lead free; Thin film; Transverse piezoelectrics; 물리학; Transverse piezoelectrics; Bi0.5Na0.5TiO3; Lead free; Cantilever; Thin film
• ISSN: 1567-1739; 1878-1675; 1567-1739
• DOI: 10.1016/j.cap.2020.07.004

Lead-free (Bi0.5Na0.5)(Ti1-xMnx)O3 (BNTMn-x; x = 0, 0.0025, 0.0050, 0.0100) thin films were fabricated using a chemical solution deposition method on Pt/TiO2/SiO2/Si substrate. The effect of Mn substitution on crystal structures, surface morphologies, and ferroelectric and transverse piezoelectric properties of BNTMn-x thin films was investigated. The 0.5 mol% Mn-doped (Bi0.5Na0.5)(Ti0.995Mn0.005)O3 thin film exhibited a well-saturated ferroelectric P-E hysteresis loop at room temperature. A remnant polarization (Pr) of 16 μC/cm2 was obtained for the BNTMn-0.0050 film at an applied electric field of 400 kV/cm. In addition, a 1.12-μm-thick BNTMn-0.0050 film was applied as a cantilever. The Pt/BNTMn-0.0050/Pt/TiO2/SiO2/Si unimorph cantilever exhibited a high transverse piezoelectric coefficient (e31∗) of 2.43 C/m2. [Display omitted]