GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

• Published in: Current applied physics Vol. 17; no. 7; pp. 1005 - 1008
• Main Authors: Shin, SangHoon, Park, YounHo, Koo, HyunCheol, Song, YunHeub, Song, JinDong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2017; 한국물리학회
• Subjects: 2DHG; GaSb; Hole mobility; III-V CMOS; Lattice mismatch; 물리학; GaSb; III-V CMOS; 2DHG; Lattice mismatch; Hole mobility
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2017.03.018

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm2/Vs and high carrier concentration of 4.3 × 1012/cm2 at RT. •A GaSb material has high hole mobility and is used for hole channel device.•The 2DHG mechanism relies on band bending engineering technique.•Sometimes, a GaSb channel is suitable for hole or electron channel.•The technique to minimize lattice mismatch helps the formation of GaSb hole channel.