Electrical spin transport in a GaAs (110) channel
A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device,...
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| Published in | Current applied physics Vol. 20; no. 11; pp. 1295 - 1298 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.11.2020
한국물리학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1567-1739 1878-1675 |
| DOI | 10.1016/j.cap.2020.08.009 |
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| Abstract | A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.
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•We fabricate a homoepitaxial GaAs (110) channel without a serious defect.•TbFeCo/Ru/CoFeB structure is utilized as a spin source to measure the Hanle signal.•Spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by ~25%. |
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| AbstractList | A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.
[Display omitted]
•We fabricate a homoepitaxial GaAs (110) channel without a serious defect.•TbFeCo/Ru/CoFeB structure is utilized as a spin source to measure the Hanle signal.•Spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by ~25%. A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport. KCI Citation Count: 0 |
| Author | Koo, Hyun Cheol Chang, Joonyeon Kim, Hyung-jun Kim, Hansung Park, Hee Gyum Min, Byoung-Chul Han, Suk Hee |
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| Cites_doi | 10.1038/nnano.2015.107 10.1063/1.2349833 10.1021/acs.nanolett.8b03998 10.1103/PhysRevLett.83.4196 10.1103/PhysRev.100.580 10.1126/science.1173667 10.1063/1.4855495 10.1038/nphys543 10.1103/PhysRevApplied.2.034005 10.1063/1.4963281 10.1063/1.1786366 10.1103/PhysRevB.94.235309 10.1002/pssb.201350202 10.1063/1.4792690 |
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| Keywords | Spin diffusion length Hanle effect Tb20Fe62Co18 Spin injection GaAs |
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| Snippet | A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal... |
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| SubjectTerms | GaAs Hanle effect Spin diffusion length Spin injection Tb20Fe62Co18 물리학 |
| Title | Electrical spin transport in a GaAs (110) channel |
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