Electrical spin transport in a GaAs (110) channel

• Published in: Current applied physics Vol. 20; no. 11; pp. 1295 - 1298
• Main Authors: Kim, Hansung, Park, Hee Gyum, Min, Byoung-Chul, Han, Suk Hee, Chang, Joonyeon, Kim, Hyung-jun, Koo, Hyun Cheol
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.11.2020; 한국물리학회
• Subjects: GaAs; Hanle effect; Spin diffusion length; Spin injection; Tb20Fe62Co18; 물리학; Spin diffusion length; Hanle effect; Tb20Fe62Co18; Spin injection; GaAs
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2020.08.009

A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb20Fe62Co18/Ru/Co40Fe40B20 films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb20Fe62Co18 layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport. [Display omitted] •We fabricate a homoepitaxial GaAs (110) channel without a serious defect.•TbFeCo/Ru/CoFeB structure is utilized as a spin source to measure the Hanle signal.•Spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by ~25%.