Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

• Published in: Chinese physics B Vol. 24; no. 8; pp. 609 - 612
• Main Author: 李培 郭红霞 郭旗 张晋新 肖尧 魏莹 崔江维 文林 刘默寒 王信
• Format: Journal Article
• Language: English
• Published: 01.08.2015
• Subjects: bipolar; Charge; Collection; Computer simulation; Current carriers; effect;three-dimensional; Electrodes; event; experiment; heterojunction; Lasers; microbeam; Microbeams; numerical; Silicon germanides; simulation;laser; transistor;single
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/24/8/088502

In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors(SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional(3D) simulation model is established, the single event effect(SEE) simulation is further carried out on the basis of Si Ge HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient(SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate(C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.