Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors

Amorphous Ga2O3:CdO thin films and their thin-film transistor (TFT) photodetectors were fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT electrical parameters can be effectively regulated via changing the Cd content. The optimized Ga2O3:CdO TFT photodetector...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 116; no. 19
Main Authors Xiao, Xi, Liang, Lingyan, Pei, Yu, Yu, Jiahuan, Duan, Hongxiao, Chang, Ting-Chang, Cao, Hongtao
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 11.05.2020
Subjects
Applied physics
Gallium oxides
Photometers
Power consumption
Semiconductor devices
Spin coating
Thin film transistors
Online AccessGet full text
ISSN0003-6951
1077-3118
DOI10.1063/5.0007617

Cover

More Information
Summary:Amorphous Ga2O3:CdO thin films and their thin-film transistor (TFT) photodetectors were fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT electrical parameters can be effectively regulated via changing the Cd content. The optimized Ga2O3:CdO TFT photodetector exhibited a responsivity of 2.17 A/W and a high UV/vis. rejection of 1.88 × 104 under 260 nm at small working biases, which are comparable or even superior to the recently reported results. Systematic comparison between metal-semiconductor-metal- and TFT-type photodetectors further confirmed that our TFT photodetectors had superior detective performance and lower electrical power consumption.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0007617