Band alignment of Ga2O3/6H-SiC heterojunction

A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by an...

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Published inChinese physics B Vol. 20; no. 11; pp. 382 - 385
Main Author 常少辉 陈之战 黄维 刘学超 陈博源 李铮铮 施尔畏
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Alignment
Deposition
Energy bands
Gallium
Heterojunctions
Mathematical analysis
Offsets
SiC
Silicon carbide
价带偏移
同步辐射光电子能谱
实验确定
对齐
异质结
氧化镓
电子设备
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/11/116101

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Summary:A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.
Bibliography:Chang Shao-Hui,Chen Zhi-Zhan,Huang Wei,Liu Xue-Chao,Chen Bo-Yuan,Li Zheng-Zheng,Shi Er-Wei（Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China）
A high-quality Ga2O3 thin film is deposited on an SiC substrate to form a heterojunction structure. The band alignment of the Ga2O3/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy, The energy band diagram of the Ga2O3/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction. The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV, which indicate a type-II band alignment. This provides useful guidance for the application of Ga2O3/6H-SiC electronic devices.
band alignment; Ga2O3/6H-SiC;synchrotron radiation photoelectron spectroscopy
11-5639/O4
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/116101