Enhancement of magnetoelectric coupling by insertion of Co atomic layer into Fe3Si/BaTiO3(001) interfaces identified by first-principles calculations

The insertion of a Co single atomic layer into multiferroic interfaces is examined from first principles taking interfaces between BaTiO 3 and Fe 3Si as an example. We demonstrate that insertion of a Co atomic layer strongly prevents Si from being exposed to the interface. This protecting effect of...

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Bibliographic Details
Published inJournal of applied physics Vol. 126; no. 23
Main Authors Hamazaki, Yasunari, Gohda, Yoshihiro
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 21.12.2019
Subjects
Applied physics
Barium titanates
Cobalt
First principles
Insertion
Interface stability
Interfaces
Iron silicide
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ISSN0021-8979
1089-7550
DOI10.1063/1.5129312

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Summary:The insertion of a Co single atomic layer into multiferroic interfaces is examined from first principles taking interfaces between BaTiO 3 and Fe 3Si as an example. We demonstrate that insertion of a Co atomic layer strongly prevents Si from being exposed to the interface. This protecting effect of Co makes the interface magnetoelectric constant of Fe 3Si/Co/BaTiO 3(001) remarkably large with 1.4 as, which makes contrast with the reduction of the interface multiferroicity by Si at the Fe 3Si/BaTiO 3(001) interface. The stability of the Co monolayer and the origin of the large magnetoelectric effect are clarified.
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.5129312