The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/A10.3Ga0.TN/A1N/GaN high-electron mobility transistor utilizing a field plate （with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source） over a 165-nm sputtered HfO2 insulator （HfO2-FP- HEMT） is fabricated on a sapphire substrate. Compared with the conventional field-p...

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Published inChinese physics B Vol. 20; no. 9; pp. 365 - 371
Main Author 毛维 杨翠 郝跃 马晓华 王冲 张进成 刘红侠 毕志伟 许晟瑞 杨林安 杨凌 张凯 张乃干 裴轶
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2011
Subjects
Computer simulation
Electric potential
Gallium nitrides
Hafnium oxide
HEMT器件
High electron mobility transistors
Insulators
Semiconductor devices
Voltage
几何结构
击穿电压
比例设计
氧化铪
氮化镓
绝缘体
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/9/097203

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Summary:A GaN/A10.3Ga0.TN/A1N/GaN high-electron mobility transistor utilizing a field plate （with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source） over a 165-nm sputtered HfO2 insulator （HfO2-FP- HEMT） is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate （SiN-FP-HEMT）, the HfO2-FP-HEMT exhibits a significant improvement of the breakdown voltage （up to 181 V） as well as a record field-plate efficiency （up to 276 V/μm）. This is because the HfO2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.
Bibliography:Mao Wei Yang Cui Hao Yue Ma Xiao-Hua Wang Chong Zhang Jin-Cheng Liu Hong-Xia Bi Zhi-Wei Xu Sheng-Rui Yang Lin-An Yang Ling Zhang Kai Zhang Nai-Qian and Pei Yi a） Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics, Xidian University, Xi＇an 710071, China b） School of Technical Physics, Xidian University, Xi＇an 710071, China
A GaN/A10.3Ga0.TN/A1N/GaN high-electron mobility transistor utilizing a field plate （with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source） over a 165-nm sputtered HfO2 insulator （HfO2-FP- HEMT） is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate （SiN-FP-HEMT）, the HfO2-FP-HEMT exhibits a significant improvement of the breakdown voltage （up to 181 V） as well as a record field-plate efficiency （up to 276 V/μm）. This is because the HfO2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.
11-5639/O4
Hf02 insulator, HfO2-FP-HEMT, FP efficiency, proportional design
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/9/097203