Effect of post-deposition annealing on the structural, optical and electrical properties of IGZO films
IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In 2 O 3 and GZO targets. The films were then vacuum annealed at 100°C, 200°C and 300°C for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties...
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| Published in | Electronic materials letters Vol. 11; no. 3; pp. 481 - 484 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Institute of Metals and Materials
01.05.2015
대한금속·재료학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1738-8090 2093-6788 |
| DOI | 10.1007/s13391-014-4410-1 |
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| Abstract | IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In
2
O
3
and GZO targets. The films were then vacuum annealed at 100°C, 200°C and 300°C for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties of the films. Although XRD patterns demonstrated that all films had an amorphous phase regardless of annealing temperature, electrical resistivity decreased to as low as 3.2 × 10
-4
Ω cm at an annealing temperature of 300°C. The optical transmittance in the visible wavelength region also improved from 80 to 83%. The figure of merit shows that IGZO films annealed at 300°C have the higher optical and electrical performance than other films prepared under different conditions in this study. |
|---|---|
| AbstractList | IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In
2
O
3
and GZO targets. The films were then vacuum annealed at 100°C, 200°C and 300°C for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties of the films. Although XRD patterns demonstrated that all films had an amorphous phase regardless of annealing temperature, electrical resistivity decreased to as low as 3.2 × 10
-4
Ω cm at an annealing temperature of 300°C. The optical transmittance in the visible wavelength region also improved from 80 to 83%. The figure of merit shows that IGZO films annealed at 300°C have the higher optical and electrical performance than other films prepared under different conditions in this study. IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In2O3 and GZO targets. The films were then vacuum annealed at 100°C, 200°C and 300°C for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties of the films. Although XRD patterns demonstrated that all films had an amorphous phase regardless of annealing temperature, electrical resistivity decreased to as low as 3.2 × 10−4 Ω cm at an annealing temperature of 300°C. The optical transmittance in the visible wavelength region also improved from 80 to 83%. The figure of merit shows that IGZO films annealed at 300°C have the higher optical and electrical performance than other films prepared under different conditions in this study. KCI Citation Count: 22 |
| Author | Lee, Hak Min Gong, Tae-Kyung Kim, Daeil Kong, Young-Min Jeon, Jae-Hyun |
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| References | KimY. S.HeoS. B.LeeH. M.LeeY.KimI.KangM.ChoiD. H.LeeB. H.KimM.KimD.Appl. Surf. Sci.2012258390310.1016/j.apsusc.2011.12.057 LiY.LiuZ.JiangK.HuX.J. Non-cryst. Solids20133785010.1016/j.jnoncrysol.2013.06.014 KimD.Optic Comm.2012285121210.1016/j.optcom.2011.10.043 LeeH.LeeY.KimI.KangM.HeoS. B.KimY.KimD.Vacuum201286149410.1016/j.vacuum.2012.02.041 KimK.LeeS.OhS.ChoW.Mater. Sci. Eng. B201317881110.1016/j.mseb.2013.04.008 KimB. B.SeoS. G.LimY. S.ChoiH. S.SeoW. S.ParkH. H.Electron. Mater. Lett.2013959910.1007/s13391-013-2208-1 SvitashevaS. N.GilinskyA. M.Appl. Surf. Sci.201328110910.1016/j.apsusc.2013.02.094 ZhangX.ZhaiJ.YuX.DingL.ZhangW.Electron. Mater. Lett.2013916110.1007/s13391-012-2188-6 SureshA.GollakotaP.WelleniusP.DhawanA.MuthJ. F.Thin Solid Films2008516132610.1016/j.tsf.2007.03.153 KimD.Appl. Surf. Sci.201025770410.1016/j.apsusc.2010.07.038 H. Lee (4410_CR5) 2012; 86 X. Zhang (4410_CR3) 2013; 9 Y. S. Kim (4410_CR8) 2012; 258 D. Kim (4410_CR6) 2012; 285 Y. Li (4410_CR1) 2013; 378 S. N. Svitasheva (4410_CR9) 2013; 281 K. Kim (4410_CR7) 2013; 178 D. Kim (4410_CR10) 2010; 257 A. Suresh (4410_CR2) 2008; 516 B. B. Kim (4410_CR4) 2013; 9 |
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| Snippet | IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In
2
O
3
and GZO targets. The films were then vacuum annealed at 100°C,... IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In2O3 and GZO targets. The films were then vacuum annealed at 100°C,... |
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| SubjectTerms | Characterization and Evaluation of Materials Chemistry and Materials Science Condensed Matter Physics Materials Science Nanotechnology Nanotechnology and Microengineering Optical and Electronic Materials Original Article 전자/정보통신공학 |
| Title | Effect of post-deposition annealing on the structural, optical and electrical properties of IGZO films |
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