Effect of post-deposition annealing on the structural, optical and electrical properties of IGZO films

• Published in: Electronic materials letters Vol. 11; no. 3; pp. 481 - 484
• Main Authors: Jeon, Jae-Hyun, Gong, Tae-Kyung, Kong, Young-Min, Lee, Hak Min, Kim, Daeil
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01.05.2015; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Original Article; 전자/정보통신공학; RF magnetron sputtering; annealing temperature; In and Ga doped zinc oxide; figure of merit
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-014-4410-1

IGZO thin films were deposited on glass substrates via RF magnetron co-sputtering with In 2 O 3 and GZO targets. The films were then vacuum annealed at 100°C, 200°C and 300°C for 30 minutes to investigate the effects of the annealing temperature on the structural, electrical, and optical properties of the films. Although XRD patterns demonstrated that all films had an amorphous phase regardless of annealing temperature, electrical resistivity decreased to as low as 3.2 × 10 -4 Ω cm at an annealing temperature of 300°C. The optical transmittance in the visible wavelength region also improved from 80 to 83%. The figure of merit shows that IGZO films annealed at 300°C have the higher optical and electrical performance than other films prepared under different conditions in this study.