Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition

• Published in: Journal of semiconductors Vol. 30; no. 8; pp. 28 - 30
• Main Author: 梁庭 李珺泓 杜文龙 薛晨阳 张文栋
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2009
• Subjects: 三角和; 压电薄膜; 压电陶瓷; 拉曼散射; 溶胶凝胶; 相变; 薄膜制备; 退火温度
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/8/083001

PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1（2TO） mode and the A1（3TO）T mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.